IXTK 75N30
Symbol
Test Conditions
Characteristic values
(T J = 25°C unless otherwise specified)
Min.
Typ. Max.
TO-264 AA Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 1.5 ? (External)
45
60
6000
1010
400
24
25
88
S
pF
pF
pF
ns
ns
ns
t f
20
ns
Dim.
Millimeter
Min.
Max.
Min.
Inches
Max.
Q G(on)
Q GS
Q GD
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
240
42
110
nC
nC
nC
A
A1
A2
b
b1
b2
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
c
0.53 0.83
.021 .033
R thJC
0.23 K/W
D
E
25.91 26.16
19.81 19.96
1.020 1.030
.780 .786
R thCK
0.15
K/W
e
J
5.46 BSC
0.00 0.25
.215 BSC
.000 .010
Source-Drain Diode
Ratings and Characteristics
(T J = 25°C unless otherwise specified)
K
L
L1
P
Q
Q1
R
R1
S
T
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
Symbol
Test Conditions
Min.
Typ. Max.
I S
I SM
V SD
t rr
Q rr
V GS = 0V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I F = 25A, -di/dt = 100 A/μs, V R = 100V
360
4
75
300
1.5
A
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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